On phosphorus diffusion in silicon under oxidizing atmospheres
Authors:
- G. MasettiGMG. Masetti
- S. SolmiSSS. Solmi
- G. SonciniGSG. Soncini
- 1 December 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (12) , 1419-1421
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- The effect of oxidation on anomalous diffusion in siliconPhilosophical Magazine, 1971
- Intrinsic Diffusion of Boron and Phosphorus in Silicon Free From Surface EffectsPhysical Review B, 1971
- Experimental-Condition Dependence of Phosphorus Diffusivity in SiliconPhysical Review Letters, 1970
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967
- Studies of anomalous diffusion of impurities in siliconSolid-State Electronics, 1966
- Redistribution of Diffused Boron in Silicon by Thermal OxidationJapanese Journal of Applied Physics, 1964
- Detailed analysis of thin phosphorus-diffused layers in p-type siliconSolid-State Electronics, 1961