Core-Shell Germanium/Germanium–Tin Nanowires Exhibiting Room-Temperature Direct- and Indirect-Gap Photoluminescence
- 10 November 2016
- journal article
- research article
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 16 (12) , 7521-7529
Abstract
Germanium-tin alloy nanowires hold promise as silicon-compatible optoelectronic elements with the potential for achieving a direct band gap transition required for efficient light emission. In contrast to Ge1-xSnx epitaxial thin films, free-standing nanowires deposited on misfitting germanium or silicon substrates can avoid compressive elastic strains that inhibit formation of a direct gap. We demonstrate strong room temperature photoluminescence, consistent with band edge emission from both the Ge core nanowires, elastically strained in tension, and the almost unstrained Ge1-xSnx shells grown around them. Low temperature chemical vapor deposition of these core-shell structures was achieved using standard precursors resulting in tin incorporation that significantly exceeds the bulk solubility limit in germanium.Keywords
Funding Information
- Division of Graduate Education (DGE-114747)
- Natural Sciences and Engineering Research Council of Canada
- Division of Materials Research (DMR-1206511, DMR-1608977)
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