Electrical Properties of Carbon Nanotube Bundles for Future Via Interconnects
Authors:
- Mizuhisa NiheiMNMizuhisa Nihei
- Akio KawabataAKAkio Kawabata
- Daiyu KondoDKDaiyu Kondo
- Masahiro HoribeMHMasahiro Horibe
- Shintaro SatoSSShintaro Sato
- Yuji AwanoYAYuji Awano
- 1 April 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (4R) , 1626-1628
Abstract
We have developed carbon nanotube (CNT) vias consisting of about 1000 tubes using thermal chemical vapor deposition (CVD) at a growth temperature of 450°C with cobalt catalysts, titanium carbide ohmic contacts, and tantalum barrier layers on copper wiring. The lowest resistance obtained was about 5 Ω/via. The total resistance of the CNT via was three orders of magnitude lower than that of one CNT, indicating that the current flows in parallel through about 1000 tubes. No degradation was observed for 100 hours at via current densities of 2×106 A/cm2, which is favorably compared with Cu vias.Keywords
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