Reaction Kinetics Analysis of Treatment Process on Light-Induced Degradation for p-Type Passivated Emitter and Rear Contact Solar Cell Module with Gallium Cz-Si Wafer
Open Access
Abstract
The light-induced degradation (LID) phenomenon in solar cells reduces power generation output. Previously, a method was developed to prevent LID where a group III impurity that can replace boron is added to the silicon wafer. However, in a subsequent study, performance degradation was observed in gallium-doped solar wafers and cells, and a degradation pattern similar to that occurring in light and elevated temperature-induced degradation (LeTID) was reported. In this study, a 72-cell module was fabricated using gallium-doped PERC cells, and the treatment of the LID process for carrier injection in the range of 1 to 7 A at 130 °C was analyzed using kinetic theory. We selectively heated only the solar cells inside a 72-cell module using a half-bridge resonance circuit for remote heating. To monitor the treatment of LID process in real time, a custom multimeter manufactured using an ACS758 current sensor and a microcomputer was used. Least-squares curve fitting was performed on the measured data using a reaction kinetics model. When the carrier-injection condition was applied to the gallium-doped PERC solar cell module at a temperature of 130 °C, the observed degradation and treatment pattern were similar to LeTID. We assumed that the treatment rate would increase as the size of the injected carrier increased; however, the 5 A condition exhibited the fastest treatment rate. It was deduced that the major factors of change in the overall treatment of the LID process vary depending on the rate of conversion from the LID state to the treatment state. In conclusion, it can be expected that the deterioration state of the gallium-doped solar cell module changes due to the treatment rate that varies depending on the carrier-injection conditions.Keywords
Funding Information
- Korea Evaluation Institute of Industrial Technology (KEIT) (20015765, C2-2402)
- Ministry of Trade, Industry and Energy (MOTIE, Korea) (20015765, C2-2402)
This publication has 22 references indexed in Scilit:
- Evidence of an identical firing-activated carrier-induced defect in monocrystalline and multicrystalline siliconSolar Energy Materials and Solar Cells, 2017
- Mass production of p-type Cz silicon solar cells approaching average stable conversion efficiencies of 22 %Energy Procedia, 2017
- A 3-state defect model for light-induced degradation in boron-doped float-zone siliconPhysica Status Solidi (RRL) – Rapid Research Letters, 2017
- Light-induced Degradation of Silicon Solar Cells with Aluminiumoxide Passivated Rear SideEnergy Procedia, 2015
- Determining the defect parameters of the deep aluminum-related defect center in siliconApplied Physics Letters, 2007
- Resistivity and lifetime variation along commercially grown Ga‐ and B‐Doped Czochralski Si ingots and its effect on light‐induced degradation and performance of solar cellsProgress in Photovoltaics: Research and Applications, 2005
- Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline siliconPhysical Review B, 2004
- Elimination of light‐induced degradation with gallium‐doped multicrystalline silicon wafersProgress in Photovoltaics: Research and Applications, 2003
- Temperature- and injection-dependent lifetime spectroscopy for the characterization of defect centers in semiconductorsApplied Physics Letters, 2003
- 19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cellsApplied Physics Letters, 1998