Abstract
The emerging optoelectronic devices with positive photoconductivity (PPC) and negative photoconductivity (NPC) have promoted the development of high‐performance photodetectors, non‐volatile photoelectric memory, and neuromorphic computing. With advantages of high bandwidth, low power consumption, and parallel computing, NPC effect‐based optoelectronic devices show great application potential in logic gates, in‐sensor computing, and artificial visual systems. Material systems, device structures, and mechanisms of NPC effect‐based devices are summarized for designing high‐performance neuromorphic electronics. The evaluation parameters of the photoelectric properties, memory capabilities, and synaptic plasticity of optoelectronic devices are discussed for the realization of high‐efficiency neuromorphic computing. Hardware and software operation of in‐sensor computing for neuromorphic computing using NPC effect‐based devices are systematically summarized to provide insights into future applications. The prospect and challenge are deeply discussed for advanced application scenarios, which provides valuable guidance for next‐generation optoelectronic in‐sensor neuromorphic computing devices.
Funding Information
  • Natural Science Foundation of Shandong Province (ZR2024YQ051)
  • Taishan Scholar Foundation of Shandong Province (tsqn202408006)
  • Basic and Applied Basic Research Foundation of Guangdong Province (2025A1515011191)
  • National Natural Science Foundation of China (12474071)
  • Basic Research Program of Jiangsu Province (BK20240424)

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