The Role of Hydrogen Atoms in Afterglow Deposition of Silicon Thin Films
Authors:
- Scott MeikleSMScott Meikle
- Yoichiro NakanishiYNYoichiro Nakanishi
- Yoshinori HatanakaYHYoshinori Hatanaka
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11A) , L2130-2132
Abstract
Silicon thin film deposition resulting from addition of SiH4 to the afterglow of an H2 plasma has been investigated. A simple experiment where a steel insert has been used to quench H atoms in the afterglow indicates that H atoms from the plasma are not required for film growth. It is proposed that the results are most easily interpreted using a model where SiH2 is the growth precursor.Keywords
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