Self-diffusion in intrinsic silicon
Authors:
- 1 August 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (3) , 211-213
Abstract
The silicon self‐diffusion in intrinsic silicon was investigated by a new method using stable isotope 30Si and the ion‐analyzer technique. The temperature dependence of the diffusion coefficient was obtained in the range from 885 to 1175 °C from which an activation energy 110.6 kcal/mole was obtained.Keywords
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