Process characterization of low-dose, threshold-voltage adjust channel implants using mercury-probe capacitance–voltage measurements
Authors:
- 1 January 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Vol. 18 (1) , 450-453
Abstract
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This publication has 1 reference indexed in Scilit:
- Determination of the semiconductor doping profile right up to its surface using the MIS capacitorSolid-State Electronics, 1975