Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy
Authors:
- Akinori KoukituAKAkinori Koukitu
- Hisashi SekiHSHisashi Seki
- 1 December 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (12B) , L1638
Abstract
A chemical equilibrium model is applied to analyze the growth of AlGaN, InGaN and InAlN alloys using metalorganic vapor-phase epitaxy (MOVPE). The vapor-solid distribution relationship and the phase diagram for deposition are calculated. It is shown that unstable regions of solid composition exist in InGaN and InAlN alloys. The origin of the unstable region is also discussed.Keywords
This publication has 2 references indexed in Scilit:
- Thermodynamic Analysis of InxGa1-xN Alloy Composition Grown by Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1996
- Epitaxial Growth and Properties of Al x Ga1 − x N by MOVPEJournal of the Electrochemical Society, 1986