Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters
Authors:
- A. RedondoARA. Redondo
- W.A. GoddardWGW.A. Goddard
- T.C. McGillTMT.C. McGill
- G.T. SurrattGSG.T. Surratt
- 1 November 1976
- journal article
- research article
- Published by Elsevier in Solid State Communications
- Vol. 20 (8) , 733-736
Abstract
No abstract availableThis publication has 13 references indexed in Scilit:
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