Abstract
Al0.37Ga0.63As nanowires (NWs) were grown in a molecular beam epitaxy system on GaAs(111)B substrates. Micro-photoluminescence measurements and energy dispersive X-ray spectroscopy indicated a core−shell structure and Al composition gradient along the NW axis, producing a potential minimum for carrier confinement. The core−shell structure formed during growth as a consequence of the different Al and Ga adatom diffusion lengths.
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