Lithography-Compatible Al 2 O 3 Stressor for Strain-Modulated T-to-H Phase Evolution of TaS 2

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Abstract
Crystalline phases of transition-metal dichalcogenides offer unique structural configurations and tunable properties, driving phase engineering toward advanced fundamental and applied research. While strain is a recognized driver for modulating phase evolution, achieving spatially precise control over phase transitions remains a significant challenge. In this work, we present a lithography-compatible technique to modulate the phase evolution of TaS2 flakes by using patterned Al2O3 nanofilm stressors. By employing standard photolithography and lift-off processes, exfoliated 1T-TaS2 flakes were integrated with controllable patterned Al2O3 overlayers. Through a combination of on-chip comparative Raman spectroscopy and cross-sectional scanning transmission electron microscopy, we demonstrate that the strain induced by the Al2O3 stressor is the governing factor in modulating TaS2 phase evolution with a thickness-dependent mechanical response. Our work provides a facile and scalable platform for spatially precise strain engineering to modulate phase transitions in transition-metal dichalcogenides toward the fabrication of phase-engineered structures in future nanoelectronic studies.
Funding Information
  • Ministry of Education of the People's Republic of China (JYB2025XDXM115)
  • National Key Research and Development Program of China (2021YFA1400100)
  • National Key Research and Development Program of China (2022YFA1403500)
  • National Natural Science Foundation of China (62171035)
  • National Natural Science Foundation of China (62375021)

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