An improved electron and hole mobility model for general purpose device simulation
Authors:
- M.N. DarwishMDM.N. Darwish
- J.L. LentzJLJ.L. Lentz
- M.R. PintoMPM.R. Pinto
- P.M. ZeitzoffPZP.M. Zeitzoff
- T.J. KrutsickTKT.J. Krutsick
- Hong Ha VuongHVHong Ha Vuong
- 1 January 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (9) , 1529-1538
Abstract
No abstract availableKeywords
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