Ab initio study of structural and electronic properties of III-arsenide binary compounds
Authors:
- Rashid AhmedRARashid Ahmed
- S. Javad HashemifarSHS. Javad Hashemifar
- Hadi AkbarzadehHAHadi Akbarzadeh
- Maqsood AhmedMAMaqsood Ahmed
- Fazal- E- AleemFAFazal- E- Aleem
- 1 May 2007
- journal article
- Published by Elsevier in Computational Materials Science
- Vol. 39 (3) , 580-586
Abstract
No abstract availableThis publication has 42 references indexed in Scilit:
- Electronic structure calculations of solids using the WIEN2k package for material sciencesComputer Physics Communications, 2002
- Density-functional calculations of semiconductor properties using a semiempirical exchange-correlation functionalPhysical Review B, 2001
- Electronic structure of BAs and boride III-V alloysPhysical Review B, 2000
- Predicted band-gap pressure coefficients of all diamond and zinc-blende semiconductors: Chemical trendsPhysical Review B, 1999
- Calculation of the Ground State Properties of Diamond and Cubic Boron NitridePhysica Status Solidi (b), 1995
- Pseudopotential methods in condensed matter applicationsComputer Physics Reports, 1989
- Structural and electronic properties of bulk GaAs, bulk AlAs, and the (GaAs(AlAssuperlatticePhysical Review B, 1988
- Material parameters of In1−xGaxAsyP1−y and related binariesJournal of Applied Physics, 1982
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964