Coherent Transfer of Spin through a Semiconductor Heterointerface

Authors:
Publisher website
Google Scholar
Abstract
Spin transport between two semiconductors of widely different band gaps is time resolved by two-color pump-probe optical spectroscopy. Electron spin coherence is created in a GaAs substrate and subsequently appears in an adjacent ZnSe epilayer at temperatures ranging from 5 to 300 K. The data show that spin information can be protected by transport to regions of low spin decoherence, and regional boundaries used to control the resulting spin coherent phase.

This publication has 14 references indexed in Scilit: