14 µm continuous-wave diamond Raman laser
Open Access
- 1 December 2017
- journal article
- Published by Optica Publishing Group in Optics Express
- Vol. 25 (25) , 31377-31383
Abstract
The longest wavelength (~1.4 µm) emitted by a diamond Raman laser pumped by a semiconductor disk laser (SDL) is reported. The output power of the intracavity-pumped Raman laser reached a maximum of 2.3 W with an optical conversion efficiency of 3.4% with respect to the absorbed diode pump power. Narrow Stokes emission (FWHM 40 nm was achieved via rotation of an intracavity birefringent filter that tuned the SDL oscillation wavelength.Keywords
Funding Information
- Research Council of Finland (278338)
- Engineering and Physical Sciences Research Council (EPSRC) (EP/I022791/1)
- Fraunhofer UK Limited
- H2020 European Research Council (ERC) (278389)
- Tekes (40016/14)
This publication has 27 references indexed in Scilit:
- Single longitudinal mode diamond Raman laser in the eye-safe spectral region for water vapor detectionOptics Express, 2016
- High-efficiency 20 W yellow VECSELOptics Express, 2014
- Multiwatt, Continuous-Wave, Tunable Diamond Raman Laser With Intracavity Frequency-Doubling to the Visible RegionIEEE Journal of Selected Topics in Quantum Electronics, 2013
- 1180 nm VECSEL with output power beyond 20 WElectronics Letters, 2013
- 106 W continuous-wave output power from vertical-external-cavity surface-emitting laserElectronics Letters, 2012
- Continuous-wave Raman laser pumped within a semiconductor disk laser cavityOptics Letters, 2011
- Semiconductor disk lasers for the generation of visible and ultraviolet radiationLaser & Photonics Reviews, 2009
- High‐brightness long‐wavelength semiconductor disk lasersLaser & Photonics Reviews, 2008
- The design and operation of solid-state Raman lasersProgress in Quantum Electronics, 2003
- Design and characteristics of high-power (<0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beamsIEEE Journal of Selected Topics in Quantum Electronics, 1999