A Fully Integrated High Efficiency 2.4 GHz CMOS Power Amplifier with Mode Switching Scheme for WLAN Applications
Open Access
- 22 June 2023
- journal article
- research article
- Published by MDPI AG in Applied Sciences
- Vol. 13 (13) , 7410
Abstract
A 3.3 V mode-switching RF CMOS power amplifier (PA) for WLAN applications is presented, which is integrated into a 55-nm bulk CMOS process. The proposed PA offers both static control and dynamic power control, allowing it to operate efficiently in both low-power and high-power modes. The pure low-power mode is achieved by reducing power cells, which are also used for linearization in high power mode. The low-power mode is achieved by reducing the number of power cells which are also used for linearization in the high-power mode. In the dynamic power control mode, the total AM–AM and AM–PM distortion is effectively compensated for by dynamically controlling the number of power cells and adjusting the matching input. The proposed PA achieves an output P1dB of 27.6 dBm with a PAE of 32.7% and an output P1dB of 17.7 dBm with a PAE of 10% in high-power and low-power modes, respectively. It is measured with an 802.11 n 64-quadrature-amplitude-modulation (MCS7) signal and shows a maximum average power of 19 dBm under an error-vector-magnitude (EVM) of −27 dB.Keywords
This publication has 44 references indexed in Scilit:
- A Class-G Voltage-Mode Doherty Power AmplifierIEEE Journal of Solid-State Circuits, 2017
- A 5-GHz WLAN RF CMOS Power Amplifier With a Parallel-Cascoded Configuration and an Active Feedback LinearizerIEEE Transactions on Microwave Theory and Techniques, 2017
- Voltage Mode Doherty Power AmplifierIEEE Journal of Solid-State Circuits, 2017
- An Integrated Dual-Mode CMOS Power Amplifier With Linearizing Body NetworkIEEE Transactions on Circuits and Systems II: Express Briefs, 2016
- An Efficiency-Enhanced Stacked 2.4-GHz CMOS Power Amplifier With Mode Switching Scheme for WLAN ApplicationsIEEE Transactions on Microwave Theory and Techniques, 2015
- Linearized Dual-Band Power Amplifiers With Integrated Baluns in 65 nm CMOS for a 2$\, \times \,$2 802.11n MIMO WLAN SoCIEEE Journal of Solid-State Circuits, 2010
- A Fully Integrated Dual-Mode Highly Linear 2.4 GHz CMOS Power Amplifier for 4G WiMax ApplicationsIEEE Journal of Solid-State Circuits, 2009
- Analysis and Design of a Dynamic Predistorter for WCDMA Handset Power AmplifiersIEEE Transactions on Microwave Theory and Techniques, 2007
- A SiGe PA With Dual Dynamic Bias Control and Memoryless Digital Predistortion for WCDMA Handset ApplicationsIEEE Journal of Solid-State Circuits, 2006
- A fully matched N-way doherty amplifier with optimized linearityIEEE Transactions on Microwave Theory and Techniques, 2003