Floating Gate PMOS Dosimeters Under Bias Controlled Cycled Measurement
- 17 February 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 58 (3) , 808-812
Abstract
Floating Gate Metal Oxide Semiconductor (FG-MOS) structures, designed and fabricated in a CMOS process, were irradiated under the Bias Controlled Cycled Measurement (BCCM) novel technique conditions. Results presented in this work show the possibility of using such structures with the BCCM technique to measure ionizing radiation absorbed dose over a range of several kGy without significant loss of sensitivity. Transients observed after the bias switch are related to the evolution of the charge distribution between the floating gate and oxide traps near the semiconductor.Keywords
This publication has 17 references indexed in Scilit:
- Reducing Measurement Uncertainties Using Bias Cycled Measurement in MOS Dosimetry at Different TemperaturesIEEE Transactions on Nuclear Science, 2010
- Extension of the Measurement Range of MOS Dosimeters Using Radiation Induced Charge NeutralizationIEEE Transactions on Nuclear Science, 2008
- The empirical dependence of radiation-induced charge neutralization on negative bias in dosimeters based on the metal-oxide-semiconductor field-effect transistorJournal of Applied Physics, 2006
- A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeterIEEE Transactions on Nuclear Science, 2004
- FGMOS dosimetry: design and implementationIEEE Transactions on Nuclear Science, 2001
- MOS ionizing radiation dosimeters: from low to high dose measurementRadiation Physics and Chemistry, 2001
- Strategies for MilliRad sensitivity in PMOS dosimetersIEEE Transactions on Nuclear Science, 1998
- A floating gate MOSFET dosimeter requiring no external bias supplyIEEE Transactions on Nuclear Science, 1998
- Interface states induced by the presence of trapped holes near the silicon–silicon-dioxide interfaceJournal of Applied Physics, 1995
- A design solution to increasing the sensitivity of pMOS dosimeters: the stacked RADFET approachIEEE Transactions on Nuclear Science, 1995