Normally-off AlGaN/GaN HFETs using NiOx gate with recess
Authors:
- 1 June 2009
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in 2009 21st International Symposium on Power Semiconductor Devices & IC's
- No. 10636854,p. 25-28
Abstract
The normally-off AlGaN/GaN HFETs on Si substrate were fabricated. To realize normally-off characteristic, recess was formed under the gate electrode and NiOx was formed as a gate electrode. As a result, the fabricated AlGaN/GaN HFET with a gate width of 157 mm exhibited a threshold voltage of +0.8 V, a breakdown voltage of more than 800 V, an on-resistance of 72 mOmega, and a maximum drain current of more than 20 A. The on-resistance-area product (RontimesA) was 0.28 Omegamiddotmm 2 . This value is approximately 1/28 compared with that of conventional Si MOSFETs. The gate leakage current was decreased about four orders of magnitude smaller than the conventional normally-on HFETs. The NiOx gate electrode operates as a p-type material.Keywords
This publication has 8 references indexed in Scilit:
- AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics ApplicationsIEEE Electron Device Letters, 2008
- Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion ImplantationIEEE Electron Device Letters, 2007
- Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction CircuitJapanese Journal of Applied Physics, 2007
- 20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si SubstrateJapanese Journal of Applied Physics, 2007
- Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and DrainJapanese Journal of Applied Physics, 2007
- High-Breakdown Enhancement-Mode AlGaN/GaN HEMTs with Integrated Slant Field-Plate2006
- Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate ContactJapanese Journal of Applied Physics, 2006
- High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatmentIEEE Electron Device Letters, 2005