SJ-MOSFET with wave-type field limiting ring for high di/dt robustness of body diode reverse recovery
Authors:
- 1 October 2018
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 148, 70-74
Abstract
No abstract availableKeywords
Funding Information
- National Natural Science Foundation of China (61674030, 61604038)
- Natural Science Foundation of Jiangsu Province (BK20160691, BK20171156)
This publication has 7 references indexed in Scilit:
- Analysis of the reverse recovery oscillation of superjunction MOSFET body diodeSolid-State Electronics, 2017
- Superjunction Power Devices, History, Development, and Future ProspectsIEEE Transactions on Electron Devices, 2017
- High‐voltage superjunction VDMOS with low reverse recovery lossElectronics Letters, 2013
- Analysis of the electrical characteristics of 600V-Class electron irradiated fast recovery Superjunction VDMOSSolid-State Electronics, 2012
- A Novel Charge-Imbalance Termination for Trench Superjunction VDMOSIEEE Electron Device Letters, 2010
- Reduction of power MOSFET losses in hard-switched convertersElectronics Letters, 2008
- Dynamic avalanche in 3.3-kV Si power diodesIEEE Transactions on Electron Devices, 1999