AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
Authors:
- G. SiminGSG. Simin
- M. Asif KhanMKM. Asif Khan
- I. AdesidaIAI. Adesida
- 7 November 2002
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 23 (8) , 455-457
Abstract
AlGaN/GaN high electron mobility transistors (HEMTs) grown on semi-insulating SiC substrates with a 0.12 /spl mu/m gate length have been fabricated. These 0.12-/spl mu/m gate-length devices exhibited maximum drain current density as high as 1.23 A/mm and peak extrinsic transconductance of 314 mS/mm. The threshold voltage was -5.2 V. A unity current gain cutoff frequency (f/sub T/) of 121 GHz and maximum frequency of oscillation (f/sub max/) of 162 GHz were measured on these devices. These f/sub T/ and f/sub max/ values are the highest ever reported values for GaN-based HEMTs.Keywords
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