AlGaN/GaN-Based Lateral-Type Schottky Barrier Diode With Very Low Reverse Recovery Charge at High Temperature

Authors:

30 July 2013

journal article
research article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 60 (10) , 3032-3039
DOI:10.1109/ted.2013.2273271

Abstract

We have demonstrated the lateral multifinger-type Schottky barrier diode (SBD) with bonding pad over active structure fabricated on the AlGaN/GaN heterostructure prepared on sapphire substrate. The fabricated GaN-SBD with size of 9 mm ² exhibited excellent device characteristics such as forward current of 4.5 A at 1.5 V, leakage current of 6 μA at 600 V, and high breakdown voltage of 747 V. The temperature variations of GaN-SBD for the reverse recovery characteristics are negligible and the value of reverse-recovery charge (Q) _rr of GaN-SBD is one twentieth of Si-diode at 175°C.

Keywords

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