Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells
Authors:
- K. SaidKSK. Said
- J. PoortmansJPJ. Poortmans
- M. CaymaxMCM. Caymax
- J.F. NijsJNJ.F. Nijs
- L. DebargeLDL. Debarge
- E. ChristoffelECE. Christoffel
- A. SlaouiASA. Slaoui
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (10) , 2103-2110
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- High quality, relaxed SiGe epitaxial layers for solar cell applicationThin Solid Films, 1999
- Refined modeling of optical confinement in thin silicon layers with a Lambertian back reflector for solar cell applicationsJournal of Applied Physics, 1998
- Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination levelJournal of Applied Physics, 1995
- Efficiency enhancements in crystalline silicon solar cells by alloying with germaniumSolar Energy Materials and Solar Cells, 1992
- Modeling of minority-carrier surface recombination velocity at low-high junction of an n/sup +/-p-p/sup +/ silicon diodeIEEE Transactions on Electron Devices, 1991
- Operating limits of Al-alloyed high-low junctions for BSF solar cellsSolid-State Electronics, 1981