Electrical and Thermal Properties of Materials in the System As2Te3-Tl2Te-As2Se3
Authors:
- 1 September 1962
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 33 (9) , 2770-2773
Abstract
Seven compositions were prepared in the system As2Te3‐Tl2Te‐As2Se3. Some of the samples were amorphous while others were diphasal including both amorphous and crystalline phases. The electrical and thermal properties of the samples were structure dependent. At room temperature the resistivity values ranged from 4.7×10−3 to 1.8×105 Ω‐cm, Seebeck coefficient values were 40 to 1210 μV/°K and thermal conductivity values were 18.1 to 2.2 mW/cm‐deg.Keywords
This publication has 4 references indexed in Scilit:
- Semiconducting Properties of Inorganic Amorphous MaterialsJournal of Applied Physics, 1961
- Effect of Random Inhomogeneities on Electrical and Galvanomagnetic MeasurementsJournal of Applied Physics, 1960
- Theory of Thermoelectric Power in Semiconductors with Applications to GermaniumPhysical Review B, 1953
- The Electrical Resistance of Binary Metallic MixturesJournal of Applied Physics, 1952