Indium zinc oxide ohmic contact to poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) induced by UV light
Authors:
- Abderrafia MoujoudAMAbderrafia Moujoud
- Sang Hoon OhSOSang Hoon Oh
- Kon Yi HeoKHKon Yi Heo
- Keun Woo LeeKLKeun Woo Lee
- Hyun Jae KimHyun Jae Kim
- 1 August 2009
- journal article
- Published by Elsevier in Organic Electronics
- Vol. 10 (5) , 785-790
Abstract
No abstract availableKeywords
This publication has 21 references indexed in Scilit:
- Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devicesJournal of Applied Physics, 2008
- New modeling of the power diode using the VHDL-AMS languageThe European Physical Journal Applied Physics, 2007
- Effects of ultraviolet irradiation on energy band structure and conductivity of polyanilineJournal of Applied Physics, 2007
- Organic solar cells: An overviewJournal of Materials Research, 2004
- Stability of polythiophene-based transistors and circuitsJournal of Applied Physics, 2003
- Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanismApplied Physics Letters, 2003
- Hole injection barriers at polymer anode/small molecule interfacesApplied Physics Letters, 2001
- Aging induced traps in organic semiconductorsSynthetic Metals, 2001
- Hole limited recombination in polymer light-emitting diodesApplied Physics Letters, 1999
- Synthesis of electrically conducting organic polymers: halogen derivatives of polyacetylene, (CH) xJournal of the Chemical Society, Chemical Communications, 1977