Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors
Authors:
- 13 January 1986
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (2) , 133-135
Abstract
A new technique is presented for separating the threshold‐voltage shift of a metal‐oxide‐semiconductor transistor into shifts due to interface traps and trapped‐oxide charge. This technique is applied to threshold‐voltage shifts on an n‐channel transistor that result from ionizing radiation.Keywords
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