Stochastic printing failures in extreme ultraviolet lithography
- 25 September 2018
- journal article
- Published by SPIE-Intl Soc Optical Eng in Journal of Micro/Nanolithography, MEMS, and MOEMS
- Vol. 17 (04) , 041011-23
Abstract
Stochastic effects in lithography are known to be the cause of critical dimension (CD) variability, quantified, e.g., by linewidth roughness or local CD uniformity, but—when the CDs are small—they can also lead to printing failures, and hence have a significant impact on yield. We will focus on these printing failures and review three important topics in this relatively new field. First, we will look at how these failures can be detected and show how either CD-SEM, e-beam inspection, and optical defect inspection can play a useful role. Next, we consider the important question of how the stochastic failure probability (which we quantify by a metric we call “Not OK,” abbreviated NOK) depends on the lithography- and process-settings, a question that is of obvious importance when looking for conditions that will minimize the failure probability and hence maximize the yield. Finally, we will discuss to what extent we can fit experimentally observed failure probabilities, to empirical models. Such models can play a vital role in future OPC-verification flows, where screening full mask layouts for “stochastic hot spots” is expected to become a mandatory step.Keywords
This publication has 35 references indexed in Scilit:
- Stochastic effects in EUV lithography2018
- Stochastic effects in EUV lithography: random, local CD variability, and printing failuresJournal of Micro/Nanolithography, MEMS, and MOEMS, 2017
- EUV reticle print verification with advanced broadband optical wafer inspection and e-Beam review systems2017
- Defectivity and CD uniformity improvement in resist coating and developing process in EUV lithography process2017
- Coater/developer based techniques to improve high-resolution EUV patterning defectivity2017
- Enabling CD SEM metrology for 5nm technology node and beyond2017
- Impact of stochastic effects on EUV printability limits2014
- In-line E-beam wafer metrology and defect inspection: the end of an era for image-based critical dimensional metrology? New life for defect inspection2013
- Line-edge roughness and the ultimate limits of lithography2010
- Resist blur and line edge roughness2005