Transfer Printing of AlGaInAs/InP Etched Facet Lasers to Si Substrates

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Abstract
InP-etched facet ridge lasers emitting in the optical C-band are heterogeneously integrated on Si substrates by microtransfer printing for the first time. ${\rm{500\,\mu m\,\times \,60\,\mu m}}$ laser coupons are fabricated with a highly dense pitch on the native InP substrate. The laser epitaxial structure contains a 1-μm-thick InGaAs sacrificial layer. A resist anchoring system is used to restrain the devices while they are released by selectively etching the InGaAs layer with FeCl 3 :H 2 O (1:2) at 8 °C. Efficient thermal sinking is achieved by evaporating Ti–Au on the Si target substrate and annealing the printed devices at 300 °C. This integration strategy is particularly relevant for lasers being butt coupled to polymer or silicon-on-insulator (SOI) waveguides.
Funding Information
  • Science Foundation Ireland under Irish Photonic Integration Centre (12/RC/2276)
  • Irish Higher Education Authority Program for Research in Third Level Institutions
  • INSPIRE

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