Analysis of Zn diffusion in various crystallographic directions of GaN grown by HVPE
Authors:
- Kacper SierakowskiKSKacper Sierakowski
- Rafal JakielaRJRafal Jakiela
- Arianna JaroszynskaAJArianna Jaroszynska
- Michal FijalkowskiMFMichal Fijalkowski
- Tomasz SochackiTSTomasz Sochacki
- Malgorzata IwinskaMIMalgorzata Iwinska
- Marcin TurekMTMarcin Turek
- Akira UedonoAUAkira Uedono
- Michael A. ReshchikovMRMichael A. Reshchikov
- Michal BockowskiMBMichal Bockowski
Open Access
- 21 August 2023
- journal article
- research article
- Published by Elsevier in Materials Science in Semiconductor Processing
- Vol. 167
Abstract
No abstract availableKeywords
Funding Information
- U.S. Navy
- Narodowe Centrum Nauki (2018/29/B/ST5/00338, 2021/41/N/ST5/04518)
- Narodowe Centrum Badań i Rozwoju (TECHMATSTRATEG-III/0003/2019–00)
- Office of Naval Research (N62909-21-1-2063)
This publication has 37 references indexed in Scilit:
- Non-polar and semi-polar ammonothermal GaN substratesSemiconductor Science and Technology, 2012
- Nonpolar GaN substrates grown by ammonothermal methodApplied Physics Letters, 2009
- Diffusion of Mn in gallium arsenideJournal of Alloys and Compounds, 2006
- Diffusion and activation of Zn implanted into InP:SVacuum, 2005
- Co-implantation of Si+N into GaN for n-type dopingJournal of Applied Physics, 2002
- VEPFIT applied to depth profiling problemsApplied Surface Science, 1995
- Equilibrium pressure of N2 over GaN and high pressure solution growth of GaNJournal of Crystal Growth, 1984
- Doping mechanism and properties of Zn‐doped GaN‐epitaxial layersCrystal Research and Technology, 1983
- Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAsPhysical Review B, 1963
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956