Enhanced monolayer MoS2/InP heterostructure solar cells by graphene quantum dots
- 18 April 2016
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 108 (16) , 163901
Abstract
We demonstrate significantly improved photovoltaic response of monolayer molybdenum disulfide (MoS2)/indium phosphide (InP) van der Waals heterostructure induced by graphene quantum dots (GQDs). Raman and photoluminescence measurements indicate that effective charge transfer takes place between GQDs and MoS2, which results in n-type doping of MoS2. The doping effect increases the barrier height at the MoS2/InP heterojunction, thus the averaged power conversion efficiency of MoS2/InP solar cells is improved from 2.1% to 4.1%. The light induced doping by GQD provides a feasible way for developing more efficient MoS2 based heterostructure solar cells.Keywords
Funding Information
- National Natural Science Foundation of China (51202216)
- China Postdoctoral Science Foundation (2014M561759)
This publication has 38 references indexed in Scilit:
- Exciton Binding Energy of Monolayer WS2Scientific Reports, 2015
- Electronics based on two-dimensional materialsNature Nanotechnology, 2014
- Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide SemiconductorsPhysical Review X, 2014
- Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer MaterialsNano Letters, 2013
- Electroluminescence in Single Layer MoS2Nano Letters, 2013
- Band offsets and heterostructures of two-dimensional semiconductorsApplied Physics Letters, 2013
- Tightly bound trions in monolayer MoS2Nature Materials, 2012
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenidesNature Nanotechnology, 2012
- How Good Can Monolayer MoS2 Transistors Be?Nano Letters, 2011
- Emerging Photoluminescence in Monolayer MoS2Nano Letters, 2010