First steps towards the realization of a double layer perceptron based on organic memristive devices
Open Access
- 24 October 2016
- journal article
- conference paper
- Published by AIP Publishing in AIP Advances
- Vol. 6 (11) , 111301
Abstract
Memristors are widely considered as promising elements for the efficient implementation of synaptic weights in artificial neural networks (ANNs) since they are resistors that keep memory of their previous conductive state. Whereas demonstrations of simple neural networks (e.g., a single-layer perceptron) based on memristors already exist, the implementation of more complicated networks is more challenging and has yet to be reported. In this study, we demonstrate linearly nonseparable combinational logic classification (XOR logic task) using a network implemented with CMOS-based neurons and organic memrisitive devices that constitutes the first step toward the realization of a double layer perceptron. We also show numerically the ability of such network to solve a principally analogue task which cannot be realized by digital devices. The obtained results prove the possibility to create a multilayer ANN based on memristive devices that paves the way for designing a more complex network such as the double layer perceptron.Keywords
Funding Information
- Russian Science Foundation (16-13-00052)
This publication has 25 references indexed in Scilit:
- Bipolar resistive switching and charge transport in silicon oxide memristorMaterials Science and Engineering: B, 2015
- Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memoriesApplied Physics Letters, 2014
- Investigation of the resistance switching in Au/SrTiO3:Nb heterojunctionsApplied Physics Letters, 2013
- Memristive devices for computingNature Nanotechnology, 2012
- Energy-Efficient Neuron, Synapse and STDP Integrated CircuitsIEEE Transactions on Biomedical Circuits and Systems, 2012
- A 45nm CMOS neuromorphic chip with a scalable architecture for learning in networks of spiking neurons2011
- Memory effects in complex materials and nanoscale systemsAdvances in Physics, 2011
- Neuromorphic Silicon Neuron CircuitsFrontiers in Neuroscience, 2011
- The missing memristor foundNature, 2008
- Electric-field-induced resistance switching universally observed in transition-metal-oxide thin filmsApplied Physics Letters, 2006