Thickness dependent resistive switching behaviors in Ta2O5 layer at low temperature: Towards flexible, invisible, cryo-electronic applications in aerospace
Authors:
- Ajit KumarAKAjit Kumar
- Mokurala KrishnaiahMKMokurala Krishnaiah
- Dhananjay MishraDMDhananjay Mishra
- Sung Hun JinSJSung Hun Jin
- 15 April 2022
- journal article
- research article
- Published by Elsevier in Materials Letters
- Vol. 319
Abstract
No abstract availableKeywords
Funding Information
- Incheon National University
This publication has 11 references indexed in Scilit:
- Three-Dimensional Amorphous Ni–Cr Alloy Printing by Electrochemical Additive ManufacturingACS Applied Electronic Materials, 2020
- Compliance Current-Controlled Conducting Filament Formation in Tantalum Oxide-Based RRAM Devices with Different Top ElectrodesACS Applied Electronic Materials, 2020
- Electroforming-Free, Flexible, and Reliable Resistive Random-Access Memory Based on an Ultrathin TaOx FilmACS Applied Materials & Interfaces, 2020
- Metal oxide resistive switching memory: Materials, properties and switching mechanismsCeramics International, 2017
- Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching MemoryACS Nano, 2017
- Low-Temperature Characteristics of HfOx-Based Resistive Random Access MemoryIEEE Electron Device Letters, 2015
- Thermally Stable Transparent Resistive Random Access Memory based on All‐Oxide HeterostructuresAdvanced Functional Materials, 2013
- Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM DevicesIEEE Transactions on Electron Devices, 2011
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structuresNature Materials, 2011
- A concept for the entry, descent, and landing of high-mass payloads at MarsActa Astronautica, 2010