Calcium as a nonradiative recombination center in InGaN
Authors:
- Jimmy-Xuan ShenJSJimmy-Xuan Shen
- Darshana WickramaratneDWDarshana Wickramaratne
- Cyrus E. DreyerCDCyrus E. Dreyer
- Audrius AlkauskasAAAudrius Alkauskas
- Erin YoungEYErin Young
- James S. SpeckJSJames S. Speck
- Chris G. Van de WalleCWChris G. Van de Walle
- 13 January 2017
- journal article
- Published by IOP Publishing in Applied Physics Express
- Vol. 10 (2)
Abstract
Calcium can be unintentionally incorporated during the growth of semiconductor devices. Using hybrid functional first-principles calculations, we assess the role of Ca impurities in GaN. Ca substituted on the cation site acts as a deep acceptor with a level ~1 eV above the GaN valence-band maximum. We find that for Ca concentrations of 1017 cm−3, the Shockley–Read–Hall recombination coefficient, A, of InGaN exceeds 106 s−1 for band gaps less than 2.5 eV. A values of this magnitude can lead to significant reductions in the efficiency of light-emitting diodesKeywords
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