Silicon Nitride–Silicon Carbide Nancocomposites Fabricated by Electric‐Field‐Assisted Sintering
Authors:
- 1 March 2003
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 86 (3) , 526-528
Abstract
Starting with Si‐C‐N(‐O) amorphous powders, and using the electric field assisted sintering (EFAS) technique, silicon nitride/silicon carbide nanocomposites were fabricated with yttria as an additive. It was found that the material could be sintered in a relatively short time (10 min at 1600°C) to satisfactory densities (2.96–3.09 g/cm 3 ) using 1–8 wt% yttria. With decreasing yttria content, the ratio of SiC to Si 3 N 4 increased, whereas the grain size decreased from ∼150 nm to as small as 38 nm. This offers an attractive way to make nano‐nanocomposites of silicon nitride and silicon carbide.Keywords
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