Diffusion Coefficient and Reaction Rate Constant of the SiH3 Radical in Silane Plasma
Authors:
- Naoshi ItabashiNINaoshi Itabashi
- Kozo KatoKKKozo Kato
- Nobuki NishiwakiNNNobuki Nishiwaki
- Toshio GotoTGToshio Goto
- 1 February 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (2A) , L325-328
Abstract
By using infrared diode laser absorption spectroscopy, the rotational temperature and the number density of the SiH3(X̃2A1) radical were measured in a pulsed SiH4/H2 discharge. The decay of the absorption intensity was also measured as a function of the filling gas pressure for the line Q(6, 6)(1- ← 0+) of the SiH3 ν2 fundamental band to determine the effective diffusion coefficients (D(SiH3 in H2) and D(SiH3 in SiH4)) and the reaction rate constant (k) of the SiH3 radical.Keywords
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