Mobility of Air-Stable p-type Polythiophene Field-Effect Transistors Fabricated Using Oxidative Chemical Vapor Deposition
Authors:
- 30 January 2020
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 49 (6) , 3465-3471
Abstract
No abstract availableKeywords
Funding Information
- National Science Foundation (ECCS-1931088)
- Purdue University
- Korea Research Institute of Standards and Science (19011032)
- National Research Foundation of Korea (NRF-2018R1A2B6002194)
This publication has 42 references indexed in Scilit:
- A stable solution-processed polymer semiconductor with record high-mobility for printed transistorsScientific Reports, 2012
- The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistorsThin Solid Films, 2012
- A study of the specific contact resistance and channel resistivity of amorphous IZO thin film transistors with IZO source–drain metallizationJournal of Applied Physics, 2011
- OTFT performance of air-stable ester-functionalized polythiophenesJournal of Materials Chemistry, 2010
- Electrical conductivity and relaxation in poly(3-hexylthiophene)Physical Review B, 2009
- Synthesis, characterization and comparative study of thiophene–benzothiadiazole based donor–acceptor–donor (D–A–D) materialsJournal of Materials Chemistry, 2009
- Carrier concentration dependence of Ti∕Au specific contact resistance on n-type amorphous indium zinc oxide thin filmsApplied Physics Letters, 2008
- Low band gap polymers for organic photovoltaicsSolar Energy Materials and Solar Cells, 2007
- Degradation of organic solar cells due to air exposureSolar Energy Materials and Solar Cells, 2006
- Floating contact transmission line modelling: An improved method for ohmic contact resistance measurementSolid-State Electronics, 2005