Phonon linewidth in III-V semiconductors from density-functional perturbation theory
- 15 May 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 57 (20) , 12847-12858
Abstract
In this work we present an ab initio calculation of the Raman linewidth of transverse and longitudinal phonon in zinc-blende semiconductors GaAs, AlAs, GaP, and InP. We propose a simple approximation that permits us to calculate the longitudinal linewidths with the same computational effort as the transverse ones. The microscopic mechanisms responsible for the decay are analyzed and discussed. The temperature dependence of the linewidths is computed. Our results are in good agreement with available experimental data up to room temperature for both transverse and longitudinal optical modes and give reliable predictions in materials difficult to study experimentally.Keywords
This publication has 35 references indexed in Scilit:
- Lifetime of Phonons in Semiconductors under PressurePhysical Review Letters, 1997
- Anharmonic Phonon Lifetimes in Semiconductors from Density-Functional Perturbation TheoryPhysical Review Letters, 1995
- Third-order density-functional perturbation theory: A practical implementation with applications to anharmonic couplings in SiSolid State Communications, 1994
- The Physics of PhononsPhysics Today, 1991
- Ab initiocalculation of phonon dispersions in semiconductorsPhysical Review B, 1991
- Green’s-function approach to linear response in solidsPhysical Review Letters, 1987
- Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and: Anharmonic effectsPhysical Review B, 1984
- Phonon Dispersion Relations in Insulators1979
- Phonons and photons in crystalsAdvances in Physics, 1970
- Dielectric constants and lattice vibrationsJournal of Physics and Chemistry of Solids, 1962