Liquid phase epitaxial growth and photoluminescence of InAsSb grown on GaSb substrates from antimony solution
Authors:
- 1 October 1993
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 133 (1-2) , 108-116
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substratesJournal of Electronic Materials, 1987
- High-detectivity InAs 0.85 Sb 0.15 /InAs infra-red (1.8-4.8 μm) detectorsElectronics Letters, 1986
- Liquid-phase epitaxial growth of ternary InAs x Sb1?x for small amounts of InAsJournal of Materials Science Letters, 1985
- Liquid-phase epitaxy of In(As, Sb) on GaSb substrates using antimony-rich meltsSolid-State Electronics, 1985
- InAsSb strained-layer superlattices for long wavelength detector applicationsJournal of Vacuum Science & Technology B, 1984
- Liquid phase epitaxial growth of InAs1-xSbx on GaSbJournal of Electronic Materials, 1979
- Nature, origin and effect of dislocations in epitaxial semiconductor layersJournal of Crystal Growth, 1978
- Liquid phase epitaxial growth of InGaAsSb on (111)B InAsJournal of Crystal Growth, 1976
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]Journal of the Electrochemical Society, 1971