Dilute nitride based double-barrier quantum-well infrared photodetector operating in the near infrared
- 13 October 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (15) , 3111-3113
Abstract
Near-infrared detection is reported for a double-barrier quantum-well infrared photodetector based on a 30-Å GaAs 1−y N y (y≈0.01) quantum well. The growth procedure using plasma-assisted molecular-beam epitaxy is described. The as-grown sample exhibits a detection wavelength of 1.64 μm at 25 K. The detection peak strengthens and redshifts to 1.67 μm following rapid thermal annealing at 850 ° C for 30 s. The detection peak position is consistent with the calculated band structure based on the band-anticrossing model for nitrogen incorporation into GaAs.Keywords
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