Threshold LET for SEU induced by low energy ions [in CMOS memories]
Authors:
- P.J. McNultyPMP.J. McNulty
- P. RochePRP. Roche
- J.M. PalauJPJ.M. Palau
- J. GasiotJGJ. Gasiot
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6) , 1370-1377
Abstract
No abstract availableKeywords
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