Giant Spin‐Orbit Torque in Sputter‐Deposited Bi Films
Authors:
Open Access
- 7 September 2023
- journal article
- research article
- Published by Wiley in Advanced Science
- Vol. 10 (31) , e2303831
Abstract
Bismuth (Bi) has the strongest spin‐orbit coupling among non‐radioactive elements and is thus a promising material for efficient charge‐to‐spin conversion. However, previous electrical detections have reported controversial results for the conversion efficiency. In this study, an optical detection of a spin‐orbit torque is reported in a Bi/CoFeB bilayer with a polycrystalline texture of (012) and (003). Taking advantage of the optical detection, spin‐orbit torque is accurately separated from the Oersted field and achieves a giant damping‐like torque efficiency of +0.5, verifying efficient charge‐to‐spin conversion. This study also demonstrates a field‐like torque efficiency of −0.1. For the mechanism of the charge‐to‐spin conversion, the bulk spin Hall effect and the interface Rashba‐Edelstein effect are considered.Keywords
Funding Information
- National Research Foundation of Korea (2022R1A2C1006504, 2018M3D1A1058793)
This publication has 42 references indexed in Scilit:
- Spin-Torque Switching with the Giant Spin Hall Effect of TantalumScience, 2012
- Current-driven spin torque induced by the Rashba effect in a ferromagnetic metal layerNature Materials, 2010
- Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic fieldNature Physics, 2009
- Current-induced domain wall motion in Rashba spin-orbit systemPhysical Review B, 2008
- The surfaces of bismuth: Structural and electronic propertiesProgress in Surface Science, 2006
- Experimental Observation of the Spin-Hall Effect in a Two-Dimensional Spin-Orbit Coupled Semiconductor SystemPhysical Review Letters, 2005
- Observation of the Spin Hall Effect in SemiconductorsScience, 2004
- Dissipationless Quantum Spin Current at Room TemperatureScience, 2003
- Gate Control of Spin-Orbit Interaction in an Inverted IGAs/IAAs HeterostructurePhysical Review Letters, 1997
- Semimetal-to-semiconductor transition in bismuth thin filmsPhysical Review B, 1993