Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Open Access
- 28 January 2014
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 115 (4) , 044510
Abstract
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscillations of diodes based on InP and GaN with around 1 μm active region length. We compare the power spectral density of current sequences in diodes with and without notch for different lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes. On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high power alternative for sub-millimeter wave Gunn oscillations.Keywords
This publication has 25 references indexed in Scilit:
- The use of doping spikes in GaN Gunn diodesApplied Physics Letters, 2008
- Simulation of gallium nitride Gunn diodes at various doping levels and temperatures for frequencies up to 300 GHz by Monte Carlo simulation, and incorporating the effects of thermal heatingSemiconductor Science and Technology, 2008
- Efficiency and harmonic enhancement trends in GaN-based Gunn diodes: Ensemble Monte Carlo analysisApplied Physics Letters, 2004
- Comparative study of 200-300 GHz microwave power generation in GaN TEDs by the Monte Carlo techniqueSemiconductor Science and Technology, 2001
- Large-signal microwave performance of GaN-based NDR diode oscillatorsSolid-State Electronics, 2000
- Linear and nonlinear analysis of microwave power generation in submicrometer n+nn+ InP diodesJournal of Applied Physics, 1994
- Generation and Amplification of Microwave Power in Submicron n + nn + Diodes1993
- Some Basic Characteristics of Broadband Negative Resistance Oscillator CircuitsBell System Technical Journal, 1969
- Microwave oscillations of current in III–V semiconductorsSolid State Communications, 1963
- The Possibility of Negative Resistance Effects in SemiconductorsProceedings of the Physical Society (1958-1967), 1961