Electronic structure of a doped Mott-Hubbard surface
- 28 August 2025
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 112 (7)
Abstract
No abstract availableAll Related Versions
Funding Information
- Università degli Studi di Perugia
This publication has 80 references indexed in Scilit:
- Supramolecular self-assembly on the B-Si(111)-(√3x√3) R30° surface: From single molecules to multicomponent networksSurface Science Reports, 2017
- Switching the Charge State of Individual Surface Atoms at Si(111)-√3 × √3:B SurfacesNano Letters, 2015
- Ab initio molecular simulations with numeric atom-centered orbitalsComputer Physics Communications, 2009
- Low temperature phases of Pb/Si(111) and related surfacesSurface Science, 2008
- The formation of silicon (111) boron surface phases and their influence on the epitaxial growth of silicon and germaniumThin Solid Films, 2000
- Surface charge density waves at Sn/Ge(111)?Applied Surface Science, 1998
- Si overgrowth on Si(111)√3 × √3-B surface phaseSurface Science, 1996
- Direct observation of a surface charge density waveNature, 1996
- The structure of the surface determined using X-ray diffractionSurface Science, 1989
- Formation of Si(111)-B and Si epitaxy on Si(111)-B: LEED-AES studySurface Science, 1988