Characterization of substrate anisotropy using substrate integrated waveguide technology
Authors:
- 1 December 2012
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 21654727,p. 860-862
Abstract
This paper presents an analysis of characterization of substrate material using substrate integrated waveguide (SIW) technology. The advantage of characterization of dielectric anisotropy using SIW technology is that the electric field of SIW exists only along the vertical direction (normal to the substrate surface). Then the permittivity measurement sensitivity of substrate material of SIW methods are compared with other planar-circuit methods, i.e., the stripline and coplanar waveguide (CPW) methods.Keywords
This publication has 9 references indexed in Scilit:
- Permittivity Measurements at Microwave Frequencies Using Epsilon-Near-Zero (ENZ) Tunnel StructureIEEE Transactions on Microwave Theory and Techniques, 2011
- Shielded Dual-Mode Microstrip Resonator Measurement of Uniaxial AnisotropyIEEE Transactions on Microwave Theory and Techniques, 2011
- Measurement of Planar Substrate Uniaxial AnisotropyIEEE Transactions on Microwave Theory and Techniques, 2009
- Substrate Integrated Waveguide Cavity Resonators for Complex Permittivity Characterization of MaterialsIEEE Transactions on Microwave Theory and Techniques, 2008
- Measurement of frequency-dependent equivalent width of substrate integrated waveguideIEEE Transactions on Microwave Theory and Techniques, 2006
- Guided-wave and leakage characteristics of substrate integrated waveguideIEEE Transactions on Microwave Theory and Techniques, 2005
- Microwave Electronics2004
- A CPW T-resonator technique for electrical characterization of microwave substratesIEEE Microwave and Wireless Components Letters, 2002
- Integrated microstrip and rectangular waveguide in planar formIEEE Microwave and Wireless Components Letters, 2001