Robust Interlayer Exciton in WS2/MoSe2 van der Waals Heterostructure under High Pressure

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Abstract
The van der Waals (vdW) heterostructures have rich functions and intriguing physical properties, which has attracted wide attention. Effective control of excitons in vdW heterostructures is still urgent for fundamental research and realistic applications. Here, we successfully achieved quantitative tuning of the intralayer exciton of monolayers and observed the transition from intralayer excitons to interlayer excitons in WS2/MoSe2 heterostructures, via hydrostatic pressure. The energy of interlayer excitons is in a “locked” or “superstable” state, which is not sensitive to pressure. The first-principles calculation reveals the stronger interlayer interaction which leads to enhanced interlayer exciton behavior in WS2/MoSe2 heterostructures under external pressure and reveals the robust peak of interlayer excitons. This work provides an effective strategy to study the interlayer interaction in vdW heterostructures and reveals the enhanced interlayer excitons in WS2/MoSe2, which could be of great importance for the material and device design in various similar quantum systems.
Funding Information
  • National Natural Science Foundation of China (11575288, 11974045, 11974088, 61527817, 61875236, 61975007)
  • Youth Innovation Promotion Association of Chinese Academy of Sciences (Y202003)
  • Strategic Priority Research Program and Key Research Program of Frontier Sciences of the Chinese Academy of Sciences (QYZDBSSW-SLH013, XDB25000000, XDB30000000, XDB33000000)
  • National Key Research and Development Program of China (2016YFA0202300, 2016YFA0202302, 2016YFA0401503, 2018YFA0305700, 2020YFA0308800)
  • Beijing Natural Science Foundation (Z190006)

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