Thermally Stimulated and Photostimulated Luminescence from Long Duration Phosphorescent SrAl[sub 2]O[sub 4]:Eu, Dy Crystals

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Abstract
The traps in long duration phosphorescent SrAl2O4:Eu2+,SrAl2O4:Eu2+, Dy3+Dy3+ crystals have been evaluated using thermally stimulated luminescence and photostimulated luminescence (PSL) techniques. Afterglow phosphorescence is not observed at temperatures lower than 150 K. Traps with depths of Et,TSL=0.0024,Et,TSL=0.0024, 0.46, and 0.49 eV are detected by thermally stimulated luminescence techniques. Photostimulated luminescence evaluations reveal that trapped carriers can be released optically using an infrared laser with Et,PSL=0.55 eV.Et,PSL=0.55 eV. The trap at Et,PSL=0.55 eVEt,PSL=0.55 eV detected by the PSL may be correlated with the shallow trap levels at Et,TSL=0.0024 eV.Et,TSL=0.0024 eV. © 2003 The Electrochemical Society. All rights reserved.

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