Characterization and optimization of a new Cu/SiN/TaN/Cu damascene architecture for metal–insulator–metal capacitors
Authors:
- 1 December 2005
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 82 (3-4) , 521-528
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A parameter extraction technique for MM/FEM analysis of multilayered RF passives using TRL calibrationIEEE Microwave and Wireless Components Letters, 2004
- A new damascene architecture for high-performance metal–insulator–metal capacitors integrationMicroelectronic Engineering, 2003
- High-density MIM capacitors using AlTaOx dielectricsIEEE Electron Device Letters, 2003
- Electrical properties in silicon oxynitride and silicon nitride prepared by plasma-enhanced chemical vapor deposition2002