Computation of striated impurity distributions in melt-grown crystals, taking account of periodic remelt
Author:
- A.M.J.G. Van RunARA.M.J.G. Van Run
- 1 November 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (5-6) , 680-692
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Numerische Berechnung und Simulation des instationären Stofftransports bei wandernden Phasengrenzflächen in ZweistoffsystemenWärme- und Stoffübertragung, 1976
- Quantitative Analysis of Microsegregation in Silicon Grown by the Czochralski MethodJournal of the Electrochemical Society, 1976
- Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor SiliconJournal of the Electrochemical Society, 1973
- Zum einfluss von temperprozessen auf widerstandsschwankungen in siliziumeinkristallenSolid-State Electronics, 1972
- Concentration and Behavior of Carbon in Semiconductor SiliconJournal of the Electrochemical Society, 1970
- Diffusion Coefficients of Impurities in Silicon MeltJapanese Journal of Applied Physics, 1963
- A MATHEMATICAL ANALYSIS OF SOLUTE REDISTRIBUTION DURING SOLIDIFICATIONCanadian Journal of Physics, 1955
- The Distribution of Solute in Crystals Grown from the Melt. Part I. TheoreticalThe Journal of Chemical Physics, 1953
- The flow due to a rotating discMathematical Proceedings of the Cambridge Philosophical Society, 1934
- Über laminare und turbulente ReibungZAMM - Journal of Applied Mathematics and Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik, 1921