Contrast and resolution of SEM charge-collection images of dislocations
Author:
- 1 January 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (1) , 80-81
Abstract
Image profiles obtained in the scanning electron microscope operating in the charge-collection mode are calculated for a dislocation perpendicular to a surface barrier. The image resolution is not limited by the minority-carrier diffusion length in the semiconductor, but only determined by the generation volume, in agreement with experiment. The contrast characteristics of a dislocation differ from those of a localized defect, leading to a practical method for distinguishing the two types of imperfections.Keywords
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