Tunneling microscopy of Ge(001)

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Abstract
The closely related geometric and electronic structure of the Ge(001) surface have been investigated with the tunneling microscope. An asymmetric dimer reconstruction is observed that does not require vacancy-type defects for stabilization at room temperature. Regions of local (2×1), c(4×2), and p(2×2) symmetry are found, and the atomic positions in these regions are modeled with use of different arrangements of asymmetric buckled dimers. This model leads to a geometric and electronic surface configuration that is consistent with the tunneling-microscope images.

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